High-Performance Normally-Off Al2O3/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique

被引：168

作者：

Wang, Ye ^{[1
]}

Wang, Maojun ^{[1
]}

Xie, Bing ^{[1
]}

Wen, Cheng P. ^{[1
]}

Wang, Jinyan ^{[1
]}

Hao, Yilong ^{[1
]}

Wu, Wengang ^{[1
]}

Chen, Kevin J. ^{[2
]}

Shen, Bo ^{[3
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China

[3] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 11期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN; high-k; MOSFET; normally-off; recess; MODE; HEMTS;

D O I：

10.1109/LED.2013.2279844

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports a normally-OFF Al2O3/GaN gate-recessed MOSFET using a low-damage digital recess technique featuring multiple cycles of plasma oxidation and wet oxide removal process. The wet etching process eliminates the damage induced by plasma bombardment induced in conventional inductively coupled plasma dry etching process so that good surface morphology and high interface quality could be achieved. The fully recessed Al2O3/GaN MOSFET delivers true enhancement-mode operation with a threshold voltage of +1.7 V. The maximum output current density is 528 mA/mm at a positive gate bias of 8 V. A peak field-effect mobility of 251 cm(2)/V.s is obtained, indicating high-quality Al2O3/GaN interface.

引用

页码：1370 / 1372

页数：3

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