A key for realizing p-type ZnO

被引：0
|
作者：
Kawasaki, M [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 980, Japan
来源：
2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS | 2005年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Doping of nitrogen into high crystallinity ZnO epitaxial film is shown to provide with p-type conduction. We employ a temporal combination of high temperature process pursuing high crystallinity and low temperature process facilitating incorporation of nitrogen.
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页码：267 / 268
页数：2
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