Direct hydrogen gas generation by using InGaN epilayers as working electrodes

被引:74
作者
Li, J. [1 ]
Lin, J. Y. [1 ]
Jiang, H. X. [1 ]
机构
[1] Texas Tech Univ, Nanotech Ctr, Lubbock, TX 79409 USA
关键词
D O I
10.1063/1.3006332
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the growth and exploitation of InGaN epilayers as a photoelectrochemical cell (PEC) material for direct generation of hydrogen by splitting water using photoelectrochemical hydrolysis. Under white light illumination, a drastic dependence of the photocurrent density on the In content was observed. Direct hydrogen gas generation by splitting water was accomplished using an n-type InxGa1-xN epilayer with a relatively high In content (x similar to 0.4) as a working electrode. This demonstration of hydrogen generation by water splitting accomplished using InGaN based PEC is highly encouraging. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3006332]
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页数:3
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