Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature

被引：22

作者：

Duquenne, C. ^{[1
]}

Djouadi, M. A. ^{[1
]}

Tessier, P. Y. ^{[1
]}

Jouan, P. Y. ^{[1
]}

Besland, M. P. ^{[1
]}

Brylinski, C.

Aubry, R. ^{[2
]}

Delage, S. ^{[2
]}

机构：

[1] Univ Nantes, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France

[2] ALCATEL THALES III V LAB, F-91461 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.2967816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the synthesis of 1 mu m thick single crystalline aluminum nitride films by dc magnetron sputtering on AlGaN/GaN layer grown on sapphire substrate at low temperature (substrate temperature < 250 degrees C). The microstructure of c-axis oriented AlN films deposited on Si (100) and AlGaN < 0001 > substrates was studied by x-ray diffraction, selected area electron diffraction, and transmission electron microscopy. The optimization of process parameters, involving low energetic ion bombardment on film surface (20-30 eV) during the growth, leads to an increase in the surface mobility and thus promotes AlN epitaxial growth on AlGaN substrate at 250 degrees C.

引用

页数：3

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