Inversion domains generated at substrate steps in GaN/(0001) Al2O3 layers

被引：10

作者：

Barbaray, B ^{[1
]}

Potin, V ^{[1
]}

Ruterana, P ^{[1
]}

Nouet, G ^{[1
]}

机构：

[1] Inst Sci Mat & Rayonnement, Lab Etud & Rech Mat, CNRS, F-14050 Caen, France

来源：

关键词：

gallium nitride; high resolution electron microscopy; molecular beam epitaxy; step;

D O I：

10.1016/S0925-9635(98)00315-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The GaN/(0001) Al2O3 interface was investigated by HREM. Steps of height c(substrate)/3 = 0.433 nm were found to give rise to extended defects in the epitaxial layer. These defects are inversion domains whose boundary atomic structure was found to be described by the Holt model. A geometrical analysis shows that such inversion domains call form on steps in order to minimize the misfit along the c-axis. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：314 / 318

页数：5

共 50 条

[41] Reactive sputtering of Al2O3 on AlGaN/GaN heterostructure field-effect transistor
Jhin, J.
Kang, H.
Byun, D.
Kim, D.
Adesida, I.
THIN SOLID FILMS, 2008, 516 (18) : 6483 - 6486
[42] A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric
Feng Qian
Xing Tao
Wang Qiang
Feng Qing
Li Qian
Bi Zhi-Wei
Zhang Jin-Cheng
Hao Yue
CHINESE PHYSICS B, 2012, 21 (01)
[43] Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth
Zhang, Lei
Shao, Yongliang
Hao, Xiaopeng
Wu, Yongzhong
Qu, Shuang
Chen, Xiufang
Xu, Xiangang
JOURNAL OF CRYSTAL GROWTH, 2011, 334 (01) : 62 - 66
[44] Epitaxial growth of high In-content In0.41Ga0.59N/GaN heterostructure on (11-20) Al2O3 substrate
Krishna, Shibin
Aggarwal, Neha
Mishra, Monu
Maurya, K. K.
Kaur, Mandeep
Sehgal, Geetanjali
Singh, Sukhveer
Dilawar, Nita
Gupta, Bipin Kumar
Gupta, Govind
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 658 : 470 - 475
[45] The effect of growth temperature on nitrogen incorporation into ZnO film grown on Al2O3 substrate
Park, S. H.
Minegishi, T.
Ito, M.
Park, J. S.
Im, I. H.
Chang, J. H.
Oh, D. C.
Ko, H. J.
Cho, M. W.
Yao, T.
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (03) : 466 - 469
[46] Epitaxial Growth of Bandgap Tunable ZnSnN2 Films on (0001) Al2O3 Substrates by Using a ZnO Buffer
Le, Duc Duy
Ngo, Trong Si
Song, Jung-Hoon
Hong, Soon-Ku
CRYSTAL GROWTH & DESIGN, 2018, 18 (03) : 1385 - 1393
[47] High-quality GaN grown on stainless steel substrate with Al2O3 buffer via plasma-enhanced atomic layer deposition
He, Yingfeng
Si, Zhengying
Shi, Yu 'ang
Wei, Huiyun
Peng, Mingzeng
Zheng, Xinhe
MATERIALS LETTERS, 2023, 350
[48] Crystal Orientation of GaN Nanostructures Grown on Al2O3 and Si(111) with a Zr Buffer Layer
Kim, Minji
Shin, Jeong
Jeon, Hunsoo
Ahn, Hyung Soo
Yi, Sam Nyung
Choi, Seok-Cheol
Lee, Sang-Geul
Yu, Young Moon
Sawaki, Nobuhiko
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (01)
[49] Hole-Trapping Process at Al2O3/GaN Interface Formed by Atomic Layer Deposition
Teramoto, Akinobu
Saito, Masaya
Suwa, Tomoyuki
Narita, Tetsuo
Kuroda, Rihito
Sugawa, Shigetoshi
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (09) : 1309 - 1312
[50] Improving performance of Al2O3/AlN/GaN MOSC-HEMTs via microwave annealing
Chen, Dingbo
Li, Xiao-Xi
Li, Yu-Chun
Peng, Bo-Fang
Zhang, David Wei
Lu, Hong-Liang
APPLIED SURFACE SCIENCE, 2021, 570

← 1 2 3 4 5 →