Inversion domains generated at substrate steps in GaN/(0001) Al2O3 layers

被引：10
|
作者：
Barbaray, B [1 ]
Potin, V [1 ]
Ruterana, P [1 ]
Nouet, G [1 ]
机构：
[1] Inst Sci Mat & Rayonnement, Lab Etud & Rech Mat, CNRS, F-14050 Caen, France
来源：
DIAMOND AND RELATED MATERIALS | 1999年 / 8卷 / 2-5期
关键词：
gallium nitride; high resolution electron microscopy; molecular beam epitaxy; step;
D O I：
10.1016/S0925-9635(98)00315-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The GaN/(0001) Al2O3 interface was investigated by HREM. Steps of height c(substrate)/3 = 0.433 nm were found to give rise to extended defects in the epitaxial layer. These defects are inversion domains whose boundary atomic structure was found to be described by the Holt model. A geometrical analysis shows that such inversion domains call form on steps in order to minimize the misfit along the c-axis. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：314 / 318
页数：5
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