A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

被引：9

作者：

Degraeve, R

Roussel, P

Ogier, JL

Groeseneken, G

Maes, HE

机构：

[1] IMEC, B 3001 Leuven

来源：

MICROELECTRONICS AND RELIABILITY | 1996年 / 36卷 / 11-12期

关键词：

D O I：

10.1016/0026-2714(96)00166-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new statistical model for fitting competing Weibull distributions is introduced. This model takes into account that capacitors with process-induced defects can also fail intrinsically if they survive the extrinsic breakdown mode. It is shown that this model in combination with a field acceleration law for intrinsic and extrinsic breakdown, can be implemented in a maximum likelihood fitting algorithm, allowing to fit a complete set of breakdown data obtained at different field conditions simultaneously in one single calculation. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：1651 / 1654

页数：4