Raman tensor elements of β-Ga2O3

被引:196
作者
Kranert, Christian [1 ,2 ]
Sturm, Chris [1 ]
Schmidt-Grund, Ruediger [1 ]
Grundmann, Marius [1 ]
机构
[1] Univ Leipzig, Inst Expt Phys 2, Abt Halbleiterphys, Linnestr 5, D-04103 Leipzig, Germany
[2] Fraunhofer Technol Ctr Semicond Mat THM, St Niclas Schacht 13, D-09599 Freiberg, Germany
关键词
AB-INITIO; SPECTRA;
D O I
10.1038/srep35964
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The Raman spectrum and particularly the Raman scattering intensities of monoclinic beta-Ga2O3 are investigated by experiment and theory. The low symmetry of beta-Ga2O3 results in a complex dependence of the Raman intensity for the individual phonon modes on the scattering geometry which is additionally affected by birefringence. We measured the Raman spectra in dependence on the polarization direction for backscattering on three crystallographic planes of beta-Ga2O3 and modelled these dependencies using a modified Raman tensor formalism which takes birefringence into account. The spectral position of all 15 Raman active phonon modes and the Raman tensor elements of 13 modes were determined and are compared to results from ab-initio calculations.
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页数:9
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