Microstructure and energy-storage performance of PbO-B2O3-SiO2-ZnO glass added (Pb0.97La0.02)(Zr0.97Ti0.03)O3 antiferroelectric thick films

被引：28

作者：

Hao, Xihong ^{[1
,2
]}

Wang, Peng ^{[2
]}

Zhang, Xuefeng ^{[1
]}

Xu, Jinbao ^{[3
]}

机构：

[1] Lab Integrated Exploitat Bayan Obo Multimetal Res, Baotou 014010, Peoples R China

[2] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China

[3] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2013年 / 48卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Electronic materials; Electrical properties; Energy storage; DIELECTRIC-PROPERTIES; TITANATE; DENSIFICATION; DENSITY;

D O I：

10.1016/j.materresbull.2012.10.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, Pb0.97La0.02(Zr0.97Ti0.03)O-3 (PUT 2/97/3) antiferroelectric (AFE) thick films with 0-5 wt.% PbO-B2O3-SiO2-ZnO glass addition were successfully fabricated on alumina substrates via a screen printing method. The effects of the added glass on the microstructure, the dielectric properties, and the energy-storage performance of the PLZT 2/97/3 AFE thick films were investigated in detail. The results showed that the proper addition of glass powders was favor to form a denser microstructure with a pure perovsike phase. As a result, the dielectric properties and the energy-storage performance of AFE thick films were greatly improved by the addition of glass. The maximum recoverable energy-storage density of 3.1 J/cm(3) was obtained in 3-wt.% glass-added AFE thick films. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：84 / 88

页数：5

共 20 条

[1] Development of lead zirconate titanate family thick films on various substrates [J].

Akiyama, Y ;

Yamanaka, K ;

Fujisawa, E ;

Kowata, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B) :5524-5527

[2] X-ray powder diffraction data of A-formula lanthanum and titanium substituted lead zirconate [J].

Breval, E ;

Wonderling, N ;

Dougherty, JP .

POWDER DIFFRACTION, 2003, 18 (03) :252-262

[3] ENERGY STORAGE IN CERAMIC DIELECTRICS [J].

BURN, I ;

SMYTH, DM .

JOURNAL OF MATERIALS SCIENCE, 1972, 7 (03) :339-&

[4]

Chen X. F., 2009, J APPL PHYS, V106

[5] A dielectric polymer with high electric energy density and fast discharge speed [J].

Chu, Baojin ;

Zhou, Xin ;

Ren, Kailiang ;

Neese, Bret ;

Lin, Minren ;

Wang, Qing ;

Bauer, F. ;

Zhang, Q. M. .

SCIENCE, 2006, 313 (5785) :334-336

[6] Liquid-phase sintering of PZT ceramics [J].

Corker, DL ;

Whatmore, RW ;

Ringgaard, E ;

Wolny, WW .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2000, 20 (12) :2039-2045

[7]

Haertling G.H., 1999, CERAMIC T, V86, P235

[8] Energy-storage performance and electrocaloric effect in (100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films [J].

Hao, Xihong ;

Yue, Zhenxing ;

Xu, Jinbao ;

An, Shengli ;

Nan, Ce-Wen .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)

[9] Improved Energy Storage Performance and Fatigue Endurance of Sr-Doped PbZrO3 Antiferroelectric Thin Films [J].

Hao, Xihong ;

Zhai, Jiwei ;

Yao, Xi .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2009, 92 (05) :1133-1135

[10] THICK-FILM TECHNOLOGY - AN INTRODUCTION TO THE MATERIALS [J].

LARRY, JR ;

ROSENBERG, RM ;

UHLER, RO .

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1980, 3 (02) :211-225

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