Enhanced device efficiency in organic light-emitting diodes by dual oxide buffer layer

被引:18
作者
Jesuraj, P. Justin [1 ]
Hafeez, Hassan [1 ]
Rhee, Sang Ho [2 ]
Kim, Dong Hyun [1 ]
Lee, Jong Chan [1 ]
Lee, Won Ho [1 ]
Choi, Dae Keun [1 ]
Song, Aeran [3 ]
Chung, Kwun-Bum [3 ]
Song, Myungkwan [4 ]
Kim, Chang Su [4 ]
Ryu, Seung Yoon [1 ]
机构
[1] Korea Univ, Coll Sci & Technol, Div Display & Semicond Phys, Sejong Campus,2511 Sejong Ro, Sejong City 30019, South Korea
[2] Sun Moon Univ, Div Mech & ICT Convergence Engn, Dept Informat Commun & Display Engn, 221 Sunmoon Ro, Asan 31460, Chungnam, South Korea
[3] Dongguk Univ, Div Phys & Semicond Sci, Seoul 04620, South Korea
[4] KIMS, Adv Funct Thin Films Dept, Chang Won 51508, South Korea
基金
新加坡国家研究基金会;
关键词
Dual anode buffer layer; Improved charge balance; Molybdenum oxide (MoO3); Tungsten oxide (WO3); Organic light-emitting diodes; PROCESSED TUNGSTEN-OXIDE; QUANTUM-WELL STRUCTURE; INDIUM-TIN-OXIDE; THIN-FILMS; OPTICAL-PROPERTIES; MOLYBDENUM OXIDE; SOLAR-CELLS; ANODE; PERFORMANCE; NANOPARTICLES;
D O I
10.1016/j.orgel.2018.01.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have demonstrated an improvement in device performance of fluorescent organic light-emitting diodes (OLEDs) by inserting a dual anode buffer layer composed of tungsten oxide (WO3) and molybdenum oxide (MoO3). The advantage of adding dual anode buffer layers with different deposition sequences over individual and composite oxide buffer layers has been systematically analyzed based on their electronic and optical properties. The incorporation of single and composite buffer layers has been revealed to induce a very low injection barrier for holes in tri-layer fluorescent OLEDs which results in a charge imbalance in the emission layer. In contrast, a proper sequence of buffer layers (WO3/MoO3) exhibiting higher contact angle (lower surface energy) and higher surface roughness, together with a step-wise increment of potential barrier leads to a better overall charge balance in the active emission layer. Therefore, an enhanced current efficiency and power efficiency of similar to 5.8 cd/A and similar to 5.2 lm/W respectively were recorded for the WO3/MoO3 buffer unit, which was better than the insertion of individual and composite layers.
引用
收藏
页码:254 / 259
页数:6
相关论文
共 38 条
[21]  
Minakata Takashi, 2016, 2016 Compound Semiconductor Week (CSW) [includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) and 43rd International Symposium on Compound Semiconductors (ISCS)], P1, DOI 10.1109/ICIPRM.2016.7528814
[22]   Growth, structural, electrical and optical properties of the thermally evaporated tungsten trioxide (WO3) thin films [J].
Patel, K. J. ;
Panchal, C. J. ;
Kheraj, V. A. ;
Desai, M. S. .
MATERIALS CHEMISTRY AND PHYSICS, 2009, 114 (01) :475-478
[23]   Praseodymium oxide coated anode for organic light-emitting diode [J].
Qiu, CF ;
Chen, HY ;
Xie, ZL ;
Wong, M ;
Kwok, HS .
APPLIED PHYSICS LETTERS, 2002, 80 (19) :3485-3487
[24]   Correlation between interlayer thickness and device performance in blue phosphorescent organic light emitting diodes with a quantum well structure [J].
Rhee, Sang Ho ;
Kim, Chang Su ;
Song, Myungkwan ;
Ryu, Seung Yoon .
ORGANIC ELECTRONICS, 2017, 42 :343-347
[25]   Effects of Recombination Zone Formation on Optical Path Length and Device Performance in Blue Phosphorescent Organic Light-Emitting Diodes with Quantum Well Structure [J].
Rhee, Sang Ho ;
Kim, Sung Hyun ;
Ryu, Seung Yoon .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (03) :R44-R49
[26]   Development of high performance OLEDs for general lighting [J].
Sasabe, Hisahiro ;
Kido, Junji .
JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (09) :1699-1707
[27]   Organic light-emitting devices for solid-state lighting [J].
So, Franky ;
Kido, Junji ;
Burrows, Paul .
MRS BULLETIN, 2008, 33 (07) :663-669
[28]   Electrochromic Properties of WO3-MoO3 Nanocomposite Films Prepared by Electrodeposition Method [J].
Song, Xu Chun ;
Wang, Xia ;
Zheng, Yi Fan ;
Yin, Hao Yong .
CURRENT NANOSCIENCE, 2013, 9 (03) :330-334
[29]   Criteria for ITO (indium-tin-oxide) an organic light thin film as the bottom electrode of emitting diode [J].
Tak, YH ;
Kim, KB ;
Park, HG ;
Lee, KH ;
Lee, JR .
THIN SOLID FILMS, 2002, 411 (01) :12-16
[30]   Solution-Processed Tungsten Oxide as an Effective Anode Buffer Layer for High-Performance Polymer Solar Cells [J].
Tan, Zhan'ao ;
Li, Liangjie ;
Cui, Chaohua ;
Ding, Yuqin ;
Xu, Qi ;
Li, Shusheng ;
Qian, Deping ;
Li, Yongfang .
JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (35) :18626-18632