Enhanced device efficiency in organic light-emitting diodes by dual oxide buffer layer

被引:18
作者
Jesuraj, P. Justin [1 ]
Hafeez, Hassan [1 ]
Rhee, Sang Ho [2 ]
Kim, Dong Hyun [1 ]
Lee, Jong Chan [1 ]
Lee, Won Ho [1 ]
Choi, Dae Keun [1 ]
Song, Aeran [3 ]
Chung, Kwun-Bum [3 ]
Song, Myungkwan [4 ]
Kim, Chang Su [4 ]
Ryu, Seung Yoon [1 ]
机构
[1] Korea Univ, Coll Sci & Technol, Div Display & Semicond Phys, Sejong Campus,2511 Sejong Ro, Sejong City 30019, South Korea
[2] Sun Moon Univ, Div Mech & ICT Convergence Engn, Dept Informat Commun & Display Engn, 221 Sunmoon Ro, Asan 31460, Chungnam, South Korea
[3] Dongguk Univ, Div Phys & Semicond Sci, Seoul 04620, South Korea
[4] KIMS, Adv Funct Thin Films Dept, Chang Won 51508, South Korea
基金
新加坡国家研究基金会;
关键词
Dual anode buffer layer; Improved charge balance; Molybdenum oxide (MoO3); Tungsten oxide (WO3); Organic light-emitting diodes; PROCESSED TUNGSTEN-OXIDE; QUANTUM-WELL STRUCTURE; INDIUM-TIN-OXIDE; THIN-FILMS; OPTICAL-PROPERTIES; MOLYBDENUM OXIDE; SOLAR-CELLS; ANODE; PERFORMANCE; NANOPARTICLES;
D O I
10.1016/j.orgel.2018.01.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have demonstrated an improvement in device performance of fluorescent organic light-emitting diodes (OLEDs) by inserting a dual anode buffer layer composed of tungsten oxide (WO3) and molybdenum oxide (MoO3). The advantage of adding dual anode buffer layers with different deposition sequences over individual and composite oxide buffer layers has been systematically analyzed based on their electronic and optical properties. The incorporation of single and composite buffer layers has been revealed to induce a very low injection barrier for holes in tri-layer fluorescent OLEDs which results in a charge imbalance in the emission layer. In contrast, a proper sequence of buffer layers (WO3/MoO3) exhibiting higher contact angle (lower surface energy) and higher surface roughness, together with a step-wise increment of potential barrier leads to a better overall charge balance in the active emission layer. Therefore, an enhanced current efficiency and power efficiency of similar to 5.8 cd/A and similar to 5.2 lm/W respectively were recorded for the WO3/MoO3 buffer unit, which was better than the insertion of individual and composite layers.
引用
收藏
页码:254 / 259
页数:6
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