Lattice damage in InGaN induced by swift heavy ion irradiation

被引：3

作者：

Liu, Ning ^{[1
,2
]}

Zhang, Li-Min ^{[2
]}

Liu, Xue-Ting ^{[2
]}

Zhang, Shuo ^{[2
]}

Wang, Tie-Shan ^{[2
]}

Guo, Hong-Xia ^{[1
]}

机构：

[1] Northwest Inst Nucl Technol, State Key Lab Laser Interact Matter, Xian 710024, Peoples R China

[2] Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China

来源：

CHINESE PHYSICS B | 2022年 / 31卷 / 10期

基金：

中国国家自然科学基金;

关键词：

InGaN; swift heavy ions; irradiation effects; STRUCTURAL DAMAGE; RADIATION-DAMAGE; TRACK FORMATION; GAN FILMS; IMPLANTATION; INXGA1-XN; TEM;

D O I：

10.1088/1674-1056/ac7ccd

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The microstructural responses of In0.32Ga0.68N and In0.9Ga0.1N films to 2.25 GeV Xe ion irradiation have been investigated using x-ray diffraction, Raman scattering, ion channeling and transmission electron microscopy. It was found that the In-rich In0.9Ga0.1N is more susceptible to irradiation than the Ga-rich In0.32Ga0.68N. Xe ion irradiation with a fluence of 7 x 10(11) ions.cm(-2) leads to little damage in In0.32Ga0.68N but an obvious lattice expansion in In0.9Ga0.1N. The level of lattice disorder in In0.9Ga0.1N increases after irradiation, due to the huge electronic energy deposition of the incident Xe ions. However, no Xe ion tracks were observed to be formed, which is attributed to the very high velocity of 2.25 GeV Xe ions. Point defects and/or small defect clusters are probably the dominant defect type in Xe-irradiated In0.9Ga0.1N.

引用

页数：6

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