Rapid Quantitative Analysis of Element Content Ratios in Cu(In,Ga)Se2 Thin Films Using Laser-Induced Breakdown Spectroscopy

被引：6
作者：
Liu Shiming [1 ]
Xiu Junshan [1 ]
Liu Yunyan [1 ]
机构：
[1] Shandong Univ Technol, Sch Phys & Optoelect Engn, Zibo 255049, Shandong, Peoples R China
来源：
CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG | 2019年 / 46卷 / 09期
关键词：
spectroscopy; laser-induced breakdown spectroscopy; thin film analysis; optical forbidden bandwidth; Cu(In; Ga)Se-2; magnetron sputtering;
D O I：
10.3788/CJL201946.0911001
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Herein, the single-target magnetron sputtering method is used to prepare Cu (In, Ga)Se-2 thin films at various sputtering times, and rapid quantitative analysis of elemental content ratios of the Cu(In,Ga)Se-2 thin films is performed using laser-induced breakdown spectroscopy. Results show that the ratio of the Ga/(In-bGa) spectral line intensities and the forbidden bandwidth of the film vary synchronously. As the sputtering time increases, both parameters initially decrease and subsequently increase. This shows the potential of LIES in the field of metal thin film analysis; it can play an auxiliary role in the performance analysis of Cu ( In, Ga) Se-2 thin films and the optimization of preparation parameters.
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页数：6
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