Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors

被引：84
作者：
Pedrazzani, J. R. [1 ]
Maimon, S. [1 ]
Wicks, G. W. [1 ]
机构：
[1] Univ Rochester, Inst Opt, Rochester, NY 14627 USA
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 25期
关键词：
Semiconductor junctions - Infrared detectors - Leakage currents - III-V semiconductors - Indium arsenide - Photons;
D O I：
10.1049/el:20082925
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Surface leakage current is a significant source of dark current in conventional narrow-gap p-n junction photodetectors. It is shown that the nBn photodetector, which was originally designed to eliminate dark current arising from generation-recombination mechanisms, also effectively eliminates surface leakage currents. The result is a measured dark current lower by over six orders of magnitude than that of the InAs p-n photodetector for device temperatures of 140 K.
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收藏
页码：1487 / +
页数：2
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