Phonon bottleneck effects in rectangular graphene quantum dots

被引：2
|
作者：
Qian, Jun [1 ]
Dutta, Mitra [1 ,2 ]
Stroscio, Michael A. [1 ,2 ,3 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA
[2] Univ Illinois, Dept Phys, Chicago, IL 60607 USA
[3] Univ Illinois, Dept Bioengn, Chicago, IL 60607 USA
来源：
JOURNAL OF COMPUTATIONAL ELECTRONICS | 2012年 / 11卷 / 03期
关键词：
Graphene; Quantum dots; Confined phonons; FIELD-EFFECT TRANSISTORS; CARBON NANOTUBE; CONTINUUM MODEL; TRANSPORT;
D O I：
10.1007/s10825-012-0400-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For a graphene sheet with confining structures in the orthogonal directions of zigzag- and armchair-edge, the confined carrier states are determined. These wavefunctions and eigenvalues are used to study carrier-longitudinal optical (LO)-phonon interactions in these graphene quantum dots. The optical deformation potential is derived for these graphene quantum dots as the basis for the study of these carrier-LO-phonon interactions. Phonon bottleneck effects are identified and the Fermi golden rule transition rates are formulated.
引用
收藏
页码：293 / 301
页数：9
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