The Electrical and Optical Properties of Al-doped ZnO Thin Films Prepared by Atomic Layer Deposition

被引：1
作者：
Song, Jia
Mu, Haichuan
Jiang, Laixing
Yin, Guilin
Yu, Zhen
He, Dannong
机构：
来源：
EMERGING FOCUS ON ADVANCED MATERIALS, PTS 1 AND 2 | 2011年 / 306-307卷
关键词：
AZO thin film; TCO; ALD; SOL-GEL METHOD;
D O I：
10.4028/www.scientific.net/AMR.306-307.1402
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al-doped ZnO (AZO) thin films (similar to 100nm) with low electrical resistivity and high transparency have been prepared by atomic layer deposition on glass and Si(111) substrates at 200 degrees C with different doping sequence. The films were systematically analyzed using X-ray diffraction, scanning electron microscope (SEM), UV-vis spectroscopy and Hall measurement. XRD patterns showed that all the films were well crystallized with hexagonal wurtzite structure with preferred orientation along (100) plane. The resisitivity of films deposited with doping sequence of DEZ/TMA/H2O was lower than that with other doping sequences. Results from SEM showed a worm-like shape and similar grain sizes of AZO films. Optical transparency of AZO films was measured to be >90% for wavelengths of 400-1000 nm.
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收藏
页码：1402 / 1405
页数：4
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