Formation of III-V-on-insulator structures on Si by direct wafer bonding

被引：47

作者：

Yokoyama, Masafumi ^{[1
]}

Iida, Ryo ^{[1
]}

Ikku, Yuki ^{[1
]}

Kim, Sanghyeon ^{[1
]}

Takagi, Hideki ^{[2
]}

Yasuda, Tetsuji ^{[2
]}

Yamada, Hisashi ^{[3
]}

Ichikawa, Osamu ^{[3
]}

Fukuhara, Noboru ^{[3
]}

Hata, Masahiko ^{[3
]}

Takenaka, Mitsuru ^{[1
]}

Takagi, Shinichi ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst EEIS, Grad Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] Sumitomo Chem Co Ltd, Tsukuba, Ibaraki 3003294, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 09期

关键词：

TEMPERATURE; SILICON; TRANSISTOR; VOLTAGE; INGAAS; CMOS;

D O I：

10.1088/0268-1242/28/9/094009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the formation of III-V-compound-semiconductors-on-insulator (III-V-OI) structures with thin buried oxide (BOX) layers on Si wafers by using developed direct wafer bonding (DWB). In order to realize III-V-OI MOSFETs with ultrathin body and extremely thin body (ETB) InGaAs-OI channel layers and ultrathin BOX layers, we have developed an electron-cyclotron resonance (ECR) O-2 plasma-assisted DWB process with ECR sputtered SiO2 BOX layers and a DWB process based on atomic-layer-deposition Al2O3 (ALD-Al2O3) BOX layers. It is essential to suppress micro-void generation during wafer bonding process to achieve excellent wafer bonding. We have found that major causes of micro-void generation in DWB processes with ECR-SiO2 and ALD-Al2O3 BOX layers are desorption of Ar and H2O gas, respectively. In order to suppress micro-void generation in the ECR-SiO2 BOX layers, it is effective to introduce the outgas process before bonding wafers. On the other hand, it is a possible solution for suppressing micro-void generation in the ALD-Al2O3 BOX layers to increase the deposition temperature of the ALD-Al2O3 BOX layers. It is also another possible solution to deposit ALD-Al2O3 BOX layers on thermally oxidized SiO2 layers, which can absorb the desorption gas from ALD-Al2O3 BOX layers.

引用

页数：10

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