Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloys

被引：45

作者：

Ivanov, SV ^{[1
]}

Sorokin, SV ^{[1
]}

Kopev, PS ^{[1
]}

Kim, JR ^{[1
]}

Jung, HD ^{[1
]}

Park, HS ^{[1
]}

机构：

[1] SAMSUNG ADV INST TECHNOL,SUWON 440600,SOUTH KOREA

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00588-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper presents an original thermodynamic description of (Mg,Zn)(S,Se) MBE growth, which is in a good quantitative agreement with experimental data. This approach provides large flexibility in choosing different growth regimes of pseudomorphic ZnSe-based heterostructures to obtain desirable alloy composition, surface stoichiometry, and growth rate. The possibility to control a nearly lattice-matched to GaAs composition of a Zn1-xMgxSySe1-y alloy from (x=0, y=0.09) to (x=0.07, y=0.13) only by variation of the Mg flux intensity has been theoretically revealed and experimentally realized in an optically pumped ZnMgSSe/ZnSSe/ZnCdSe SQW SCH laser structure with a threshold power density of 20 kW/cm(2) at 300 K.

引用

页码：16 / 20

页数：5

共 10 条

[1]

GAINS JM, 1994, INT WORKSH ZNSE BAS, P47

[2]

HONIG RE, 1962, RCA REV, V23

[3] THERMODYNAMIC ANALYSIS OF SEGREGATION EFFECTS IN MBE OF AIII-BV COMPOUNDS [J].