Interface controlled diffusional creep of nanocrystalline pure copper

被引：91

作者：

Cai, B ^{[1
]}

Kong, QP

Lu, L

Lu, K

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Internal Frict & Defects Solids Lab, Hefei 230031, Peoples R China

[2] Chinese Acad Sci, Inst Met Res, State Key Lab RSA, Shenyang 110015, Peoples R China

来源：

SCRIPTA MATERIALIA | 1999年 / 41卷 / 07期

基金：

中国国家自然科学基金;

关键词：

nanocrystalline materials; copper; creep; grain boundary; diffusion;

D O I：

10.1016/S1359-6462(99)00213-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Nanocrystalline pure Cu (n-Cu) was prepared by electrodeposition onto a Ti substrate using CuSO4 precursor. The average grain size of the n-Cu was measured to be around 30 nm by X-ray diffraction and transmission electron microscopy. Tensile creep tests, performed at sufficiently low temperature to avoid grain growth, suggest the observed creep to be due to interface controlled diffusional creep.

引用

页码：755 / 759

页数：5

共 19 条

[1]

Andrade END, 1910, P R SOC LOND A-CONTA, V84, P1

[2]

Andrade END, 1914, P R SOC LOND A-CONTA, V90, P329

[3] INTERFACE CONTROLLED DIFFUSIONAL CREEP [J].