Ordered silicon nanowires prepared by template-assisted morphological design and metal-assisted chemical etching

被引：8

作者：

Liu, Kong ^{[1
]}

Qu, Shengchun ^{[1
]}

Tan, Furui ^{[1
]}

Bi, Yu ^{[1
]}

Lu, Shudi ^{[1
]}

Wang, Zhanguo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

MATERIALS LETTERS | 2013年 / 101卷

基金：

中国国家自然科学基金;

关键词：

Silicon nanowires; Anodized aluminum oxide; Chemical etching; Microstructure; Semiconductors; SI NANOWIRES; ARRAYS; FABRICATION; CATALYST; GROWTH;

D O I：

10.1016/j.matlet.2013.03.086

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We reported a metal-assisted chemical etching approach to manufacture well-aligned silicon nanowires (SiNWs). Highly ordered gold (Au) mesh was achieved via vacuum evaporation on anodized aluminum oxide (AAO). It was revealed that the diameter and length of SiNWs could be controlled by adjusting the size of holes in Au mesh and etching duration, respectively. We found that the SiNWs fabricated by etching for 5 min were vertically oriented to form an array, while longer etching duration led to bunched SiNWs. The resulting SiNWs, which exhibited smooth side walls, uniform diameter, and high aspect ratio, were proved to grow along the [100] crystal direction of silicon. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：96 / 98

页数：3

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