Structural features of spin-coated thin films of binary AsxS100-x chalcogenide glass system

被引:10
作者
Cook, J. [1 ]
Slang, S. [2 ]
Golovchak, R. [1 ]
Jain, H. [3 ]
Vlcek, M. [2 ]
Kovalskiy, A. [1 ]
机构
[1] Austin Peay State Univ, Clarksville, TN 37075 USA
[2] Univ Pardubice, Fac Chem Technol, Pardubice 53210, Czech Republic
[3] Lehigh Univ, Int Mat Inst New Funct Glass, Bethlehem, PA 18015 USA
基金
美国国家科学基金会;
关键词
Spin-coated films; Chalcogenide glass; X-ray photoelectron spectroscopy; Raman spectroscopy; AS-S GLASSES; PHOTOINDUCED CHANGES; THERMAL EVAPORATION; RAMAN-SPECTROSCOPY; TRANSFORMATIONS; SURFACE; AS2S3; BULK;
D O I
10.1016/j.tsf.2015.06.049
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated AsxS100 (-) (x) (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clusters is proposed as the basis of structural organization of the organic-inorganic interface. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:642 / 648
页数:7
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