Efficient non-vertical interband transitions in porous silicon

被引：1

作者：

Cruz, M ^{[1
]}

Beltran, MR ^{[1
]}

Wang, C ^{[1
]}

TaguenaMartinez, J ^{[1
]}

机构：

[1] INST POLITECN NACL,ESIME UC,MEXICO CITY,DF,MEXICO

来源：

PHYSICA A | 1997年 / 241卷 / 1-2期

关键词：

porous silicon; electronic structure; interband transitions; localization;

D O I：

10.1016/S0378-4371(97)00111-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this work we study an inhomogeneous material, porous silicon (PS)? using a supercell model and an s p(3) s* tight-binding Hamiltonian. The interband non-vertical transitions are studied in two schemes, which consider different contributions within the intra-atomic approximation. The oscillator strength analysis as a function of the porosity reveals a significant enlargement of the optically active zone in the k-space, due to the localization of the wave function.

引用

页码：382 / 385

页数：4

共 9 条

[1] RAMAN TENSOR OF COVALENT SEMICONDUCTORS [J].