Efficient non-vertical interband transitions in porous silicon

被引:1
作者
Cruz, M [1 ]
Beltran, MR [1 ]
Wang, C [1 ]
TaguenaMartinez, J [1 ]
机构
[1] INST POLITECN NACL,ESIME UC,MEXICO CITY,DF,MEXICO
来源
PHYSICA A | 1997年 / 241卷 / 1-2期
关键词
porous silicon; electronic structure; interband transitions; localization;
D O I
10.1016/S0378-4371(97)00111-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this work we study an inhomogeneous material, porous silicon (PS)? using a supercell model and an s p(3) s* tight-binding Hamiltonian. The interband non-vertical transitions are studied in two schemes, which consider different contributions within the intra-atomic approximation. The oscillator strength analysis as a function of the porosity reveals a significant enlargement of the optically active zone in the k-space, due to the localization of the wave function.
引用
收藏
页码:382 / 385
页数:4
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