Hillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBE

被引：6

作者：

Shi, Y. ^{[1
]}

Bergeron, E. ^{[1
,4
]}

Sfigakis, F. ^{[3
,4
]}

Baugh, J. ^{[1
,3
,4
]}

Rwasilewski, Z. ^{[1
,2
,4
,5
]}

机构：

[1] Univ Waterloo, Dept Phys & Astron, 200 Univ Ave W, Waterloo, ON N2L 3G1, Canada

[2] Univ Waterloo, Dept Elect & Comp Engn, 200 Univ Ave W, Waterloo, ON N2L 3G1, Canada

[3] Univ Waterloo, Dept Chem, 200 Univ Ave W, Waterloo, ON N2L 3G1, Canada

[4] Univ Waterloo, Inst Quantum Comp, 200 Univ Ave W, Waterloo, ON N2L 3G1, Canada

[5] Univ Waterloo, Waterloo Inst Nanotechnol, 200 Univ Ave W, Waterloo, ON N2L 3G1, Canada

来源：

JOURNAL OF CRYSTAL GROWTH | 2019年 / 513卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

Surface morphology; Substrate offcut; Spiral growth; InSb QW; Metamorphic buffer; NANOWIRE;

D O I：

10.1016/j.jcrysgro.2019.02.039

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Comprehensive studies on the surface morphological evolution of AlInSb metamorphic buffers and InSb QWs grown on top were conducted as a function of the GaAs (001) substrate offcut angles. We confirmed our earlier postulation that the vicinal surfaces defined by the hillock facets have the exact surface orientation needed to achieve large-area hillock-free surfaces. The related morphological transitions were discussed with a graphic illustration. The optimum substrate offcut for InSb towards [(1) over bar 10] direction was found to be around 0.5-0.6 degrees with our growth conditions. On 2-inch GaAs (001) substrates with this offcut, a hillock-free and atomically smooth surface morphology was successfully achieved for modulation-doped InSb QWs.

引用

页码：15 / 19

页数：5

共 23 条

[1] Majorana fermions in a tunable semiconductor device [J].

Alicea, Jason .

PHYSICAL REVIEW B, 2010, 81 (12)

[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[3] Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device [J].

Deng, M. T. ;

Yu, C. L. ;

Huang, G. Y. ;

Larsson, M. ;

Caroff, P. ;

Xu, H. Q. .

NANO LETTERS, 2012, 12 (12) :6414-6419

[4] CAPILLARY EQUILIBRIA OF DISLOCATED CRYSTALS [J].

FRANK, FC .

ACTA CRYSTALLOGRAPHICA, 1951, 4 (06) :497-501

[5] Ballistic Majorana nanowire devices [J].

Gul, Onder ;

Zhang, Hao ;

Bommer, Jouri D. S. ;

de Moor, Michiel W. A. ;

Car, Diana ;

Plissard, Sebastien R. ;

Bakkers, Erik P. A. M. ;

Geresdi, Attila ;

Watanabe, Kenji ;

Taniguchi, Takashi ;

Kouwenhoven, Leo P. .

NATURE NANOTECHNOLOGY, 2018, 13 (03) :192-+

[6] Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems [J].

Lehner, Ch. A. ;

Tschirky, T. ;

Ihn, T. ;

Dietsche, W. ;

Keller, J. ;

Falt, S. ;

Wegscheider, W. .

PHYSICAL REVIEW MATERIALS, 2018, 2 (05)

[7] Majorana zero modes in superconductor-semiconductor heterostructures [J].

Lutchyn, R. M. ;

Bakkers, E. P. A. M. ;

Kouwenhoven, L. P. ;

Krogstrup, P. ;

Marcus, C. M. ;

Oreg, Y. .

NATURE REVIEWS MATERIALS, 2018, 3 (05) :52-68

[8] Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures [J].

Lutchyn, Roman M. ;

Sau, Jay D. ;

Das Sarma, S. .

PHYSICAL REVIEW LETTERS, 2010, 105 (07)

[9] Optical Microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells [J].

McIndo, C. J. ;

Hayes, D. G. ;

Papageorgiou, A. ;

Hanks, L. A. ;

Smith, G. V. ;

Allford, C. P. ;

Zhang, S. ;

Clarke, E. M. ;

Buckle, P. D. .

ADVANCES IN QUANTUM TRANSPORT IN LOW DIMENSIONAL SYSTEMS, 2018, 964

[10] Reduction of microtwin defects for high-electron-mobility InSb quantum wells [J].

Mishima, T. D. ;

Edirisooriya, M. ;

Santos, M. B. .

APPLIED PHYSICS LETTERS, 2007, 91 (06)

← 1 2 3 →