The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes

被引:63
作者
Chen, Kuo-Ju [1 ,2 ]
Chen, Hsin-Chu [1 ,2 ]
Shih, Min-Hsiung [1 ,2 ,3 ]
Wang, Chao-Hsun [1 ,2 ]
Kuo, Ming-Yen [3 ]
Yang, Yi-Chun [3 ]
Lin, Chien-Chung [4 ]
Kuo, Hao-Chung [1 ,2 ]
机构
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
[3] Res Ctr Appl Sci, Taipei 115, Taiwan
[4] Natl Chiao Tung Univ, Inst Photon Syst, Tainan 711, Taiwan
关键词
Light-emitting diodes (LEDs); GaN; quantum dots (QDs); phosphor; PHOSPHOR; EFFICIENCY; PHOTOLUMINESCENCE; NANOCRYSTALS; EMISSION; LAYERS;
D O I
10.1109/JLT.2012.2195158
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study investigates the effect of temperature on CdSe/ZnS quantum dots (QDs) in GaN-based light-emitting diodes (LEDs) using the phosphor conversion efficiency (PCE) and LED junction temperature. In our simulation, the blue chip and CdSe/ZnS QDs temperature are similar because of their minimal thickness. Furthermore, to verify the effect of temperature on CdSe/ZnS QDs, we use continuous wave and pulsed current sources to measure the relationship between the temperature and relative PCE. Higher junction temperatures are observed with greater CdSe/ZnS QD volume in LEDs. This is attributed to the thermal conduction and nonradiative energy between CdSe/ZnS QDs and blue chip. Therefore, if thermal management is improved, CdSe/ZnS QDs are expected to be used as color converting material in LEDs.
引用
收藏
页码:2256 / 2261
页数:6
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