Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

被引：35

作者：

Dong, Shurong ^{[1
]}

Jin, Hao ^{[1
]}

Miao, Meng ^{[1
]}

Wu, Jian ^{[1
]}

Liou, Juin J. ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Capacitance coupling; dual-direction silicon-controlled rectifier (SCR); electrostatic discharge (ESD); high-voltage protection; CMOS TECHNOLOGY; HOLDING-VOLTAGE; PROTECTION;

D O I：

10.1109/LED.2012.2188015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel capacitance coupling complementary dual-direction silicon- controlled rectifier (SCR) (CCCDSCR) for high-voltage electrostatic discharge protection is proposed and verified in 0.5-mu m BCD process. The trigger voltage of CCCDSCR can be adjusted by coupling capacitance to meet different protection requirements. Compared with traditional lateral double- diffusion NMOS, LDSCR, stacked field-oxide device, and stacked low-voltage-triggering SCR devices, the CCCDSCR has appropriate low trigger voltage of 27.3 V, high holding voltage of 24.3 V, and highest figure of merit (FOM) according to our defined FOM.

引用

页码：640 / 642

页数：3

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