Effects of CuO and ZnO additives on sintering temperature and piezoelectric properties of 0.41Pb(Ni1/3Nb2/3)O3-0.36PbTiO3-0.23PbZrO3 ceramics

被引:41
作者
Ahn, CW
Nahm, S
Ryu, JH
Uchino, K
Yoon, SJ
Jung, SJ
Song, JS
机构
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
[2] Penn State Univ, Int Ctr Actuators & Transducers, Mat Res Inst, University Pk, PA 16802 USA
[3] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 130650, South Korea
[4] Korea Electrotechnol Res Inst, Elect & Magnet Devices Grp, Chang Won 641120, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 01期
关键词
0.4lPb(Ni1/3Nb2/3)O-3-0.36PbTiO(3)-0.23PbZrO(3) ceramics; piezoelectric properties; low-temperature sintering; CuO; ZnO;
D O I
10.1143/JJAP.43.205
中图分类号
O59 [应用物理学];
学科分类号
摘要
ZnO-added 0.41PNN-0.36PT-0.23PZ ceramics cannot be sintered below 950degreesC. However, when CuO is added, the liquid phase forms and specimens can be sintered even at 850degreesC. The dielectric constant (epsilon(3)(T)/epsilon(0)), piezoelectric constant (d(33)) and electromechanical coupling factor (k(p)) increase with the addition of CuO and this is due to the enhancement of the density of the specimens. When CuO is added to 0.41PNN-0.36PT-0.23PZ ceramics, improvements of density, epsilon(3)(T)/epsilon(0), d(33) and k(p) are also observed. However, the d(33) and k(p) values of the CuO-added 6.41PNN-0.36PT-0.23PZ ceramics are less than those of the CuO- and ZnO-added specimens. Therefore, ZnO is effective in improving the piezoelectric properties of 0.41PNN-0.36PT-0.23PZ ceramics. Good dielectric and piezoelectric properties of d(33) = 575(pC/N), k(p) = 0.55 and epsilon(3)(T)/epsilon(0) = 3900 are obtained for 0.41PNN-0.36PT-0.23PZ+3.0mol% ZnO with 1 mol% CuO sintered at 900degreesC for 2 h.
引用
收藏
页码:205 / 210
页数:6
相关论文
共 14 条
  • [1] Ahn C., unpublished
  • [2] Low-temperature sintering and piezoelectric properties of ZnO-added 0.41Pb(Ni1/3 Nb2/3)O3-0.36PbTiO3-0.23PbZrO3 ceramics
    Ahn, CW
    Noh, SY
    Nahm, S
    Ryu, JH
    Uchin, KJ
    Yoon, SJ
    Song, JS
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (9A): : 5676 - 5680
  • [3] BANNO H, 1997, P 1 M FERR MAT APPL, P339
  • [4] The effects of Cd-substitution site on sintering behavior and electrical properties in Pb(Ni1/3Nb2/3)O-3-PbZrO3-PbTiO3 ceramics
    Cho, JH
    Park, IE
    Chung, HT
    Kim, HG
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (1A): : 181 - 187
  • [5] Doping effects on the piezoelectric properties of low-temperature sintered PNN-PZT-based ceramics
    Chu, SY
    Hsieh, CS
    [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 2000, 19 (07) : 609 - 612
  • [6] GEBHARDT E, 1954, Z METALLKD, V45, P333
  • [7] KIM HT, 1993, THESIS KOREA U
  • [8] Piezoelectric properties of PbNi1/3Nb2/3O3-PbTiO3-PbZrO3 ceramics near the MPB
    Kondo, M
    Hida, M
    Tsukada, M
    Kurihara, K
    Kamehara, N
    [J]. JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1997, 105 (08) : 719 - 721
  • [9] LUFF D, 1974, BRIT CERAM TRANS J, V73, P251
  • [10] DENSIFICATION BEHAVIORS AND PIEZOELECTRIC PROPERTIES OF MNO2, SIO2-DOPED PB(NI1/3NB2/3)O3-PBTIO3-PBZRO3 CERAMICS
    MOON, JH
    JANG, HM
    YOU, BD
    [J]. JOURNAL OF MATERIALS RESEARCH, 1993, 8 (12) : 3184 - 3191