A 400 degrees C silicon Hall sensor

被引：22
作者：
intHout, SR
Middelhoek, S
机构：
[1] Electron. Instrumentation Laboratory, Electrical Engineering Department, Delft University of Technology, NL-2628 CD Delft
[2] IBM Research Laboratory, Adliswil
[3] IBM Research, Yorktown Heights, NY
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1997年 / 60卷 / 1-3期
关键词：
Hall sensors; high temperature; magnetic-field sensors; silicon;
D O I：
10.1016/S0924-4247(96)01412-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The maximum operating temperature of conventional silicon sensors is limited to about 200 degrees C, due to excessive thermal generation of carriers at higher temperatures. The minority-carrier exclusion effect can be exploited to reduce the number of thermally generated carriers, ultimately maintaining extrinsic carrier concentrations at intrinsic temperatures. Based on this effect, a silicon magnetic-field sensor with a maximum operating temperature of about 400 degrees C is presented. The sensitivity has been improved by about 500% with respect to a previously reported version, and now measures about 60 V (A T)(-1) at room temperature. Additionally, the theoretical support of the exclusion effect has been improved with a more accurate analytical model.
引用
收藏
页码：14 / 22
页数：9
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