Deposition of tungsten by plasma enhanced chemical vapour deposition

被引：6

作者：

Bain, MF ^{[1
]}

Armstrong, BM ^{[1
]}

Gamble, HS ^{[1
]}

机构：

[1] Queens Univ Belfast, Dept Elect & Elect Engn, No Ireland Semicond Res Ctr, Belfast BT7 1NN, Antrim, North Ireland

来源：

JOURNAL DE PHYSIQUE IV | 1999年 / 9卷 / P8期

关键词：

D O I：

10.1051/jp4:19998105

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The standard method of depositing tungsten is by LPCVD using SiH4-H-2-WF6 chemistry at temperatures of >300 degrees C. This work has studied the use of PECVD with H-2-WF6 for tungsten deposition. It was found that at deposition temperatures below 200 degrees C, the layers are polycrystalline beta phase tungsten, resistivity 50 mu Omega cm. Annealing at 900 degrees C decreases the resistivity to 10 mu Omega cm. The tungsten layers deposited at 200 degrees C and above are of the alpha phase and exhibit an as deposited resistivity of 15 mu Omega cm for 150nm layers. For the layers deposited on titanium at T>300 degrees C the initial deposition is dominated by the reduction of WF6 by the titanium until a self limiting thickness is produced. This results in titanium fluoride species being incorporated at the titanium-tungsten interface.

引用

页码：827 / 833

页数：7

共 14 条

[1]

ALUGIN D, 1990, J MAT RES SOC S P VL, P69

[2]

BAIN M, UNPUB

[3] GROWTH OF SELECTIVE TUNGSTEN ON SELF-ALIGNED TI AND PTNI SILICIDES BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].