An improved description of the dielectric breakdown in oxides based on a generalized Weibull distribution

In this work, we address modal parameter fluctuations in statistical distributions describing charge-to-breakdown (Q(BD)) and/or time-to-breakdown (t(BD)) during the dielectric breakdown regime of ultra-thin oxides, which are of high interest for the advancement of electronic technology. We reobtain a generalized Weibull distribution (q-Weibull), Which properly describes (t(BD)) data when oxide thickness fluctuations are present, in order to improve reliability assessment of ultra-thin oxides by time-to-breakdown (tBD) extrapolation and area scaling. The incorporation Of fluctuations allows a physical interpretation of the q-Weibull distribution in connection with the Tsallis Statistics. In Support to Our results, we analyze t(BD) data of SiO2-based MOS devices obtained experimentally and theoretically through a percolation model, demonstrating,in advantageous description of the dielectric breakdown by the q-Weibull distribution. (c) 2005 Elsevier B.V. All rights reserved.