Exciton fine structure in strain-free GaAs/Al0.3Ga0.7As quantum dots:: Extrinsic effects

被引:91
作者
Abbarchi, M. [1 ,2 ]
Mastrandrea, C. A. [1 ,2 ]
Kuroda, T. [3 ]
Mano, T. [3 ]
Sakoda, K. [3 ]
Koguchi, N. [4 ,5 ]
Sanguinetti, S. [4 ,5 ]
Vinattieri, A. [1 ,2 ]
Gurioli, M. [1 ,2 ]
机构
[1] Univ Florence, Dipartimento Fis, I-50019 Florence, Italy
[2] Univ Florence, European Lab Nonlinear Spect, I-50019 Florence, Italy
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[4] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy
[5] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy
来源
PHYSICAL REVIEW B | 2008年 / 78卷 / 12期
关键词
D O I
10.1103/PhysRevB.78.125321
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report polarization-resolved high spectral resolution photoluminescence measurements in self-assembled strain-free GaAs/Al(0.3)Ga(0.7)As quantum dots designed and realized in order to reduce as much as possible strain and segregation, which affected previous fine-structure splitting (FSS) experiments. Photoluminescence from isolated quantum dots exhibits a linearly polarized FSS. FSS clearly shows a quantum size effect monotonically decreasing from 90 to 20 mu eV by decreasing the quantum dot size (increasing emission energy). While this finding is similar to that observed in strained In (Ga) As/GaAs quantum dots, clearly it requires a different explanation, being our quantum dots not affected by strain-induced piezoelectricity. We ascribed the observed FSS to a size dependent reduction in dot shape anisotropy as evidenced by structural data analysis. Moreover the linear polarization in dots with shape close to cylindrical symmetry is not along the [110] crystallographic axis but it turns out randomly distributed, highlighting the role of extrinsic effects.
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页数:4
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共 33 条
[1]   Electron and hole g factors and exchange interaction from studies of the exciton fine structure in In0.60Ga0.40As quantum dots [J].
Bayer, M ;
Kuther, A ;
Forchel, A ;
Gorbunov, A ;
Timofeev, VB ;
Schäfer, F ;
Reithmaier, JP ;
Reinecke, TL ;
Walck, SN .
PHYSICAL REVIEW LETTERS, 1999, 82 (08) :1748-1751
[2]  
BELHADJ T, UNPUB
[3]   Cylindrically shaped zinc-blende semiconductor quantum dots do not have cylindrical symmetry: Atomistic symmetry, atomic relaxation, and piezoelectric effects [J].
Bester, G ;
Zunger, A .
PHYSICAL REVIEW B, 2005, 71 (04)
[4]   Pseudopotential calculation of the excitonic fine structure of million-atom self-assembled In1-xGaxAs/GaAs quantum dots -: art. no. 161306 [J].
Bester, G ;
Nair, S ;
Zunger, A .
PHYSICAL REVIEW B, 2003, 67 (16)
[5]   Effects of linear and nonlinear piezoelectricity on the electronic properties of InAs/GaAs quantum dots [J].
Bester, Gabriel ;
Zunger, Alex ;
Wu, Xifan ;
Vanderbilt, David .
PHYSICAL REVIEW B, 2006, 74 (08)
[6]  
BOUWMEESTER D, 2000, PHYS QUANTUM INFORM
[7]   Fine structure of excitonic levels in quantum dots [J].
Dzhioev, RI ;
Zakharchenya, BP ;
Ivchenko, EL ;
Korenev, VL ;
Kusraev, YG ;
Ledentsov, NN ;
Ustinov, VM ;
Zhukov, AE ;
Tsatsulnikov, AF .
JETP LETTERS, 1997, 65 (10) :804-809
[8]   Exchange coupling and polarization relaxation in self-assembled quantum dots [J].
Ferreira, R .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) :216-219
[9]   Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4As quantum dots -: art. no. 153316 [J].
Finley, JJ ;
Mowbray, DJ ;
Skolnick, MS ;
Ashmore, AD ;
Baker, C ;
Monte, AFG ;
Hopkinson, M .
PHYSICAL REVIEW B, 2002, 66 (15) :1-4
[10]   Atomic equilibrium concentrations in (InGa)As quantum dots [J].
Galluppi, M ;
Frova, A ;
Capizzi, M ;
Boscherini, F ;
Frigeri, P ;
Franchi, S ;
Passaseo, A .
APPLIED PHYSICS LETTERS, 2001, 78 (20) :3121-3123