Strongly Spin-Orbit Coupled Two-Dimensional Electron Gas Emerging near the Surface of Polar Semiconductors

被引:163
作者
Sakano, M. [1 ]
Bahramy, M. S. [2 ]
Katayama, A. [1 ]
Shimojima, T. [1 ]
Murakawa, H. [2 ]
Kaneko, Y. [2 ,4 ]
Malaeb, W. [3 ,4 ]
Shin, S. [3 ]
Ono, K. [5 ]
Kumigashira, H. [5 ]
Arita, R. [1 ,2 ]
Nagaosa, N. [1 ,2 ]
Hwang, H. Y. [2 ,7 ,8 ]
Tokura, Y. [1 ,2 ]
Ishizaka, K. [1 ,6 ]
机构
[1] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[2] RIKEN, Adv Sci Inst, CERG, Wako, Saitama 3510198, Japan
[3] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2278581, Japan
[4] JST, CREST, Tokyo 1020075, Japan
[5] High Energy Accelerator Res Org KEK, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan
[6] PRESTO, JST, Kawaguchi, Saitama 3320012, Japan
[7] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
[8] Stanford Univ, Stanford Inst Mat & Energy Sci, Stanford, CA 94305 USA
关键词
LOCALIZED WANNIER FUNCTIONS; SRTIO3; BITEI; PLANE;
D O I
10.1103/PhysRevLett.110.107204
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the two-dimensional highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Because of the polarity and the strong spin-orbit interaction built in the bulk atomic configurations, the quantized conduction-band subbands show giant Rashba-type spin splitting. The characteristic 2D confinement effect is clearly observed also in the valence bands down to the binding energy of 4 eV. The X-dependent Rashba spin-orbit coupling is directly estimated from the observed spin-split subbands, which roughly scales with the inverse of the band-gap size in BiTeX. DOI: 10.1103/PhysRevLett.110.107204
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页数:5
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