Annealing effect of Cu on the Co structure in Cu/Co/Cu sandwiches

被引:0
作者
Benaissa, M
Humbert, P
Lefakis, H
Ehret, G
Speriosu, VS
Gurney, BA
机构
[1] IBM CORP,ALMADEN RES CTR,DIV RES,SAN JOSE,CA 95120
[2] IPCMS,UMR 46 CNRS,F-67037 STRASBOURG,FRANCE
来源
INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, PT 2 | 1996年 / 207-卷
关键词
magnetic thin films; cobalt; copper; annealing; martensitic transformation; stacking faults; strain;
D O I
10.4028/www.scientific.net/MSF.207-209.697
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structure of the Co layer in sputter-deposited Ta/Cu/Co/Cu/Ta sandwiches has been investigated before and after vacuum annealing up to 280 degrees C by cross-sectional high-resolution TEM. The as-deposited sandwiches show a strong [111] fee texture with, in a number of places, many hcp stacking faults distributed all over the 75 Angstrom-thick Co layer. After annealing, the stacking faults present in a region about 20 Angstrom thick from each Co/Cu interface rearrange, leaving behind a plain Co fee structure. Relaxation of strain due to lattice mismatch at the Co/Cu interfaces is believed to contribute to the transformation of hcp into fee stacking sequences during annealing below the martensitic transition temperature.
引用
收藏
页码:697 / 700
页数:4
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