Effect of reactive sputtered SiOx passivation layer on the stability of InGaZnO thin film transistors

被引：50

作者：

Li, Jun ^{[1
,2
]}

Zhou, Fan ^{[1
]}

Lin, Hua-Ping ^{[1
]}

Zhu, Wen-Qing ^{[1
,2
]}

Zhang, Jian-Hua ^{[2
]}

Jiang, Xue-Yin ^{[1
]}

Zhang, Zhi-Lin ^{[1
,2
]}

机构：

[1] Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China

[2] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China

来源：

VACUUM | 2012年 / 86卷 / 12期

关键词：

Passivation; Reactive sputtered SiOx; Thin film transistor; Stability;

D O I：

10.1016/j.vacuum.2012.04.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated the indium-gallium-zinc oxide (IGZO) thin film transistor (TFT) with reactive sputtered SiOx as passivation layer, and investigated the role of the SiOx passivation layer in the IGZO-TFT under gate bias stress. The bias stability of IGZO-TFT with passivation layer is much better than that of IGZO-TFT without passivation layer. After applying positive bias stress of 20 V for 10000s, the device without passivation layer shows a larger positive Vth shift of 7.3 V. However, the device with passivation layer exhibits a much smaller Vth shift of 1.3 V. It suggests that Vth instability is attributed to the interaction between the exposed IGZO back surface and oxygen in ambient atmosphere during the positive gate voltage stress. The results indicate that reactive sputtered SiOx passivation layer can effectively improve the bias stability of IGZO-TFT. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：1840 / 1843

页数：4

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