Ultralow-loss silicon ring resonators

被引：153

作者：

Biberman, Aleksandr ^{[1
]}

Shaw, Michael J. ^{[2
]}

Timurdogan, Erman ^{[1
]}

Wright, Jeremy B. ^{[2
]}

Watts, Michael R. ^{[1
]}

机构：

[1] MIT, Elect Res Lab, Cambridge, MA 02139 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

OPTICS LETTERS | 2012年 / 37卷 / 20期

关键词：

WAVE-GUIDES; PROPAGATION LOSS; CHIP; FABRICATION; LIMIT;

D O I：

10.1364/OL.37.004236

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We experimentally demonstrate silicon ring resonators with internal quality factors of Q(0) = 2.2 x 10(7), corresponding to record 2.7 dB/m propagation losses. Importantly, we show that these propagation losses are limited by bend loss, indicating that the propagation loss limit for silicon has not yet been reached. (C) 2012 Optical Society of America

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收藏

页码：4236 / 4238

页数：3

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