Recent progress in negative-working photosensitive and thermally stable polymers

被引:22
|
作者
Higashihara, Tomoya [1 ]
Saito, Yuta [1 ]
Mizoguchi, Katsuhisa [1 ]
Ueda, Mitsuru [1 ]
机构
[1] Tokyo Inst Technol, Dept Organ & Polymer Mat, Meguro Ku, Tokyo 1528550, Japan
来源
REACTIVE & FUNCTIONAL POLYMERS | 2013年 / 73卷 / 02期
关键词
Negative-working; Photosensitive; Thermally stable polymer; Chemical amplification; Photoacid generator; Photobase generator; HIGH REFRACTIVE-INDEX; THIN-FILM TRANSISTORS; PHOTO-CROSS-LINKING; I-LINE REGION; POLY(O-HYDROXY AMIDE); POLY(2,6-DIMETHYL-1,4-PHENYLENE ETHER); NANOCOMPOSITE FILMS; SYNTHETIC ROUTE; POLYIMIDES; LINKER;
D O I
10.1016/j.reactfunctpolym.2012.04.020
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
The production of semiconductors, especially for semiconductor large-scale integration (LSI), has been definitely supported by photolithographic technologies using photosensitive polymers in the micro-electronic device industry. Among them, photosensitive and thermally-stable polymers (PSTSPs) provide simpler resist system than the conventional one, in which the resist materials stays after forming a pattern and function as thermally resisting insulators in integrated circuits (ICs) and multi-chip packages (MCPs), eliminating the extra process of resist removal. Recently, negative-working chemical amplification photoresists have started to receive much attention as quite simple and direct network formation systems in polymer films. The recent progress in negative-working PSTSPs based on the chemical amplification system is summarized in this review article, which includes low dielectric constant polymers for LSI, high refractive index polymers for microlens materials in complementary metal oxide semiconductor image sensors, novolac resists for indium tin oxide patterning, and poly(3-hexylthiophene) for organic field-effect transistors. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:303 / 315
页数:13
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