Organic nonvolatile memory by dopant-configurable polymer

被引：64
作者：
Lai, QX
Zhu, ZH
Chen, Y [1 ]
Patil, S
Wudl, F
机构：
[1] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期
关键词：
D O I：
10.1063/1.2191874
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report an organic, nonvolatile memory based on dopant concentration-induced conductance changes in a conjugated polymer. Consisting of a polymer poly [2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV)/ionic conductor (RbAg4I5) bilayer sandwiched between two metal electrodes, the device is electrically switched between its low-conductance "off" state and high-conductance "on" state reversibly and repeatedly with on/off ratios above two orders of magnitude and pulse durations as short as 1 mu s when a voltage exceeding its threshold values (>+3.5 V or <-3.8 V) is applied. The conductance change is attributed to the injection/depletion of iodide dopant ions in the MEH-PPV layer by the applied electric field. (c) 2006 American Institute of Physics.
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页数：3
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