An etchant for delineation of flow pattern defects in heavily doped p-type silicon wafers

被引：1

作者：

Xu, Tao ^{[1
]}

Zhang, Xinpeng ^{[1
]}

Ma, Xiangyang ^{[1
]}

Yang, Deren ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 03期

关键词：

Heavily doped p-type silicon; Flow pattern defects; Delineate; Preferential etching; GATE OXIDE INTEGRITY; CZOCHRALSKI SILICON; CRYSTALS;

D O I：

10.1016/j.mssp.2013.01.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Secco etchant is conventionally used for delineation of flow pattern defects (FPDs) in lightly-doped Czochralski (Cz) silicon wafers. However, the FPDs in heavily doped p-type silicon wafers cannot be well delineated by Secco etchant. Herein, an etchant based on the CrO3-HF-H2O system, with an optimized volume ratio of V(CrO3):V(HF)=2:3, where the concentration of CrO3 is 0.25-0.35 M, has been developed for delineation of FPDs with well-defined morphologies for the heavily boron (B)-doped p-type silicon wafers. (c) 2013 Elsevier Ltd. All rights reserved.

引用

页码：893 / 898

页数：6

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