Evidence for H2* trapped by carbon impurities in silicon

被引：22

作者：

Hourahine, B

Jones, R

Öberg, S

Briddon, PR

Markevich, VP

Newman, RC

Hermansson, J

Kleverman, M

Lindström, JL

Murin, LI

Fukata, N

Suezawa, M

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] Lulea Univ Technol, Dept Math, S-97187 Lulea, Sweden

[3] Newcastle Univ, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[4] Univ Manchester, Ctr Elect Mat, Manchester M60 1QD, Lancs, England

[5] Inst Solid State & Semicond Phys, Minsk 220072, BELARUS

[6] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat Devices, Blacket Lab, Dept Phys, London SW7 2BZ, England

[7] Lund Univ, Dept Phys, S-22100 Lund, Sweden

[8] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

关键词：

silicon; hydrogen; carbon; impurity complexes; absorption bands;

D O I：

10.1016/S0921-4526(01)00719-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and C-13 are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed. (C) 2001 Elsevier Science B,V, All rights reserved.

引用

页码：197 / 201

页数：5

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