Kinetic effects of alcohol addition on the anodic behavior of silicon in acid fluoride media

被引:3
作者
Cattarin, S [1 ]
Musiani, MM [1 ]
机构
[1] CNR, IENI, I-35127 Padua, Italy
关键词
D O I
10.1021/jp055714g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The anodic dissolution of silicon in acid solutions of ammonium fluoride is investigated in aqueous and water-alcohol media by rotating disk voltammetry and impedance spectroscopy. The voltammograms recorded in water-alcohol media show, in comparison to water, the following effects: an increase of the dissolution currents measured at pH > 2 and an opposite effect at pH < 2; a distortion of the curve, with a relative increase of the characteristic currents in the region of low applied potentials, indicating easier dissolution of the "wet" oxide forming under those conditions; a shift of the maximum of the current-pH curves from about pH 3 in water to about pH 4 in 50% ethanol v/v. Analysis of impedance data at pH values 4-5 in water and water-ethanol media show similar dependence on potential for the parameters C-hf (high-frequency capacitance) and RhfI (R-hf is a high-frequency resistance and I is the steady state current), suggesting the formation of oxide films with similar properties. The marked differences of anodic behavior in the two types of media are discussed and explained in terms of the effects of alcohol addition on the speciation equilibria of hydrofluoric acid and on the kinetic rate constants of dissolution of the surface oxide layer.
引用
收藏
页码:2451 / 2457
页数:7
相关论文
共 37 条
[21]   FORMATION MECHANISM AND PROPERTIES OF ELECTROCHEMICALLY ETCHED TRENCHES IN N-TYPE SILICON [J].
LEHMANN, V ;
FOLL, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) :653-659
[22]   POROUS SILICON PREPARATION - ALCHEMY OR ELECTROCHEMISTRY [J].
LEHMANN, V .
ADVANCED MATERIALS, 1992, 4 (11) :762-764
[23]   ELECTROLYTIC HYDROGENATION OF SILICON - A HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY INVESTIGATION [J].
LEWERENZ, HJ ;
BITZER, T ;
GRUYTERS, M ;
JACOBI, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (03) :L44-L46
[24]   High resolution surface analysis of Si roughening in dilute ammonium fluoride solution [J].
Lewerenz, HJ ;
Aggour, M ;
Murrell, C ;
Jakubowicz, J ;
Kanis, M ;
Campbell, SA ;
Cox, PA ;
Hoffmann, P ;
Jungblut, H ;
Schmeisser, D .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2003, 540 :3-6
[25]   ANODIC OXIDES ON SILICON [J].
LEWERENZ, HJ .
ELECTROCHIMICA ACTA, 1992, 37 (05) :847-864
[26]  
LUXEMBERG P, 1980, Z PHYS CHEM, V121, P187
[27]   IN-SITU INFRARED CHARACTERIZATION OF THE ELECTROCHEMICAL DISSOLUTION OF SILICON IN A FLUORIDE ELECTROLYTE [J].
OZANAM, F ;
CHAZALVIEL, JN .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1993, 64-5 :395-402
[28]   ELECTROCHEMICAL SURFACE CONDITIONING OF N-SI(111) [J].
RAPPICH, J ;
AGGOUR, M ;
RAUSCHER, S ;
LEWERENZ, HJ ;
JUNGBLUT, H .
SURFACE SCIENCE, 1995, 335 (1-3) :160-165
[29]   IN-SITU CHARACTERIZATION OF ANODIC SILICON-OXIDE FILMS BY AC-IMPEDANCE MEASUREMENTS [J].
SCHMUKI, P ;
BOHNI, H ;
BARDWELL, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (05) :1705-1712
[30]   THE FORMATION, MORPHOLOGY, AND OPTICAL-PROPERTIES OF POROUS SILICON STRUCTURES [J].
SEARSON, PC ;
MACAULAY, JM ;
PROKES, SM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (11) :3373-3378