The electronic structure of Ga-vacancy in Mn-doped GaN

被引：0
|
作者：
Kang, J. [1 ]
Chang, K. J. [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 | 2008年 / 5卷 / 09期
关键词：
D O I：
10.1002/pssc.200779180
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Using first-principles theoretical calculations, we find that Ga-vacancies (V-Ga) strongly interact with the Mn ions in GaN the and thereby significantly affect the electronic and magnetic properties. When Ga-vacancies are present in the neighbourhood of the Mn ions, a charge transfer occurs from the Mn d band to the acceptor level of V-Ga. Due to the depopulation of the Mn d band, the Fermi level is generally lowered, and ferromagnetic exchange interactions between the Mn ions are weakened, reducing the Curie temperature. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：3035 / 3037
页数：3
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