Spin accumulation in the extrinsic spin Hall effect

被引：58

作者：

Tse, WK ^{[1
]}

Fabian, J

Zutic, I

Das Sarma, S

机构：

[1] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA

[2] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany

[3] USN, Res Lab, Ctr Computat Mat Sci, Washington, DC USA

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.72.241303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is shown that carrier and spin-diffusion lengths are modified by the presence of spin-orbit coupling and that spin accumulation due to the extrinsic spin Hall effect is strongly and qualitatively influenced by boundary conditions. Analytical formulas for the spin-dependent carrier recombination rates and inhomogeneous spin densities and currents are presented.

引用

页数：4

共 27 条

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