Influence of doping with third group oxides on properties of zinc oxide thin films

被引：1
|
作者：
Palimar, Sowmya [1 ]
Bangera, Kasturi V. [1 ]
Shivakumar, G. K. [1 ]
机构：
[1] Natl Inst Technol Karnataka, Dept Phys, Thin Film Lab, Surathkal 575025, Karnataka, India
来源：
SEMICONDUCTORS | 2013年 / 47卷 / 03期
关键词：
Indium Oxide; Transparent Conductor; Gallium Oxide; Dope Film; Solar Energy Mater;
D O I：
10.1134/S1063782613030184
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 10(3) Omega(-1) cm(-1). The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.
引用
收藏
页码：422 / 426
页数：5
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