Robust Zero-Field Skyrmion Formation in FeGe Epitaxial Thin Films

被引：114

作者：

Gallagher, J. C. ^{[1
]}

Meng, K. Y. ^{[1
]}

Brangham, J. T. ^{[1
]}

Wang, H. L. ^{[1
]}

Esser, B. D. ^{[2
]}

McComb, D. W. ^{[2
]}

Yang, F. Y. ^{[1
]}

机构：

[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Mat Sci & Engn, Ctr Electron Microscopy & Anal, Columbus, OH 43212 USA

来源：

PHYSICAL REVIEW LETTERS | 2017年 / 118卷 / 02期

基金：

美国国家科学基金会;

关键词：

WEAK FERROMAGNETISM; MAGNETIC SKYRMIONS;

D O I：

10.1103/PhysRevLett.118.027201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

B20 phase magnetic materials have been of significant interest because they enable magnetic Skyrmions. One major effort in this emerging field is the stabilization of Skyrmions at room temperature and zero magnetic field. We grow phase-pure, high crystalline quality FeGe epitaxial films on Si(111). Hall effect measurements reveal a strong topological Hall effect after subtracting the ordinary and anomalous Hall effects, demonstrating the formation of high density Skyrmions in FeGe films between 5 and 275 K. In particular, a substantial topological Hall effect was observed at a zero magnetic field, showing a robust Skyrmion phase without the need of an external magnetic field.

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页数：5

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