Uniaxial strain induced band splitting in semiconducting SrTiO3

被引：16

作者：

Chang, Young Jun ^{[1
,2
,3
]}

Khalsa, Guru ^{[4
]}

Moreschini, Luca ^{[1
]}

Walter, Andrew L. ^{[1
,2
]}

Bostwick, Aaron ^{[1
]}

Horn, Karsten ^{[2
]}

MacDonald, A. H. ^{[4
]}

Rotenberg, Eli ^{[1
]}

机构：

[1] EO Lawrence Berkeley Natl Lab, ALS, Berkeley, CA 94720 USA

[2] Max Planck Gesell, Fritz Haber Inst, Dept Phys Chem, D-14195 Berlin, Germany

[3] Univ Seoul, Dept Phys, Seoul 130743, South Korea

[4] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 11期

基金：

瑞士国家科学基金会; 美国国家科学基金会; 新加坡国家研究基金会;

关键词：

2-DIMENSIONAL ELECTRON-GAS; INTERFACES;

D O I：

10.1103/PhysRevB.87.115212

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use angle-resolved photoemission spectroscopy to study the influence of mechanically induced uniaxial strain on the electronic structure of the oxide semiconductor SrTiO3. We observe an orbital splitting between the Ti 3d(yz) and 3d(xy) bands, which are degenerate when unperturbed. Using the k center dot p method, we qualitatively explain the direction and the size of the observed energy splitting. Our comprehensive understanding of band splitting explains the strain induced mobility enhancement of electron-doped SrTiO3(3) in terms of band degeneracy breaking and reduced interband scattering. Our approach can be extended to differently strained oxide systems. DOI: 10.1103/PhysRevB.87.115212

引用

页数：5

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