Effect of a delta-doping green emitting layer in white organic light-emitting device

被引:0
作者
Zhao, Juan [1 ]
Yu, Junsheng [1 ]
Jiang, Yadong [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China
来源
6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING, IMAGING, AND SOLAR ENERGY | 2012年 / 8419卷
关键词
White organic light-emitting device; double-emitting layer (EML); non-doped; delta-doping layer; green EML; IRIDIUM COMPLEXES; DIODES;
D O I
10.1117/12.977838
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
White organic light-emitting devices (WOLEDs) based on a double-emitting layer (EML) structure were fabricated, while phosphorescent blue and yellow emitters were employed. An ultra-thin layer of non-doped green tris(2-phenylpyridine) iridium [Ir(ppy)(3)], which was considered as delta-doping layer, was inserted between the two EMLs for optimization. Furthermore, effect of adjusting thickness of this thin layer on device performance was studied. The results showed that the optimized WOLED consisting of 1-nm Ir(ppy)(3) EML achieved a maximum luminance of 29,100 cd/m(2), maximum external quantum efficiency of 7%, maximum current efficiency of 25.3 cd/A and maximum power efficiency of 7.8 lm/W, together with low efficiency roll-off over a wide luminance range. Meanwhile, the white emission with Commission Internationale del'Eclariage (CIE) coordinates of (0.382,0.446) at a driving voltage of 10 V were observed. The performance enhancement is ascribed to improved charge carrier balance through introduction the highly efficient Ir(ppy)(3) as the thin delta-doping layer.
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页数:7
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