Measurement of contact potential of GaAs/AlGaAs heterostructure using Kelvin probe force microscopy

被引：11
|
作者：
Mizutani, T [1 ]
Usunami, T [1 ]
Kishimoto, S [1 ]
Maezawa, K [1 ]
机构：
[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 7A期
关键词：
Kelvin probe force microscopy; KFM; GaAs/AlGaAs heterostructure; contact potential; charge neutrality level;
D O I：
10.1143/JJAP.38.L767
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have shown that the contact potential of i-GaAs/i-AlGaAs heterostructures can be measured using Kelvin probe force microscopy (KFM). The measured contact potential difference between GaAs and AlGaAs increases monotonically with increasing AlAs mole fraction. This dependence does not agree with the model for the ideal interface where the measured contact potential is dominated by the Fermi level which lies in the midgap of bulk materials. The results are explained based on the model of the alignment of charge neutrality level during heterostructure formation.
引用
收藏
页码：L767 / L769
页数：3
相关论文
共 50 条
  • [41] Kelvin probe force microscopy for perovskite solar cells
    Kang, Zhuo
    Si, Haonan
    Shi, Mingyue
    Xu, Chenzhe
    Fan, Wenqiang
    Ma, Shuangfei
    Kausar, Ammarah
    Liao, Qingliang
    Zhang, Zheng
    Zhang, Yue
    SCIENCE CHINA-MATERIALS, 2019, 62 (06) : 776 - 789
  • [42] Local surface potential measurements of carbon nanotube FETs by Kelvin probe force microscopy
    Miyato, Y
    Kobayashi, K
    Matsushige, K
    Yamada, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4A): : 1633 - 1636
  • [43] Interdigitated back contact silicon solar cells: diode and resistance investigation at nanoscale using Kelvin Probe Force Microscopy
    Narchi, Paul
    Bearda, Twan
    Foldyna, Martin
    Prod'homme, Patricia
    Roca i Cabarrocas, Pere
    2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 3082 - 3085
  • [44] Direct observation of contact potential distributions of wafer-bonded p-GaAs/n-GaN and p-GaAs/n-Si by scanning Kelvin probe force microscopy
    Xing, Zhiwei
    Yang, Wenxian
    Zhao, Yukun
    Long, Junhua
    Li, Xuefei
    Dai, Pan
    Lai, Junqi
    Chen, Qi
    Bian, Lifeng
    Uchida, Shiro
    Lu, Shulong
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (11)
  • [45] Investigation of the Surface Potential on Iron Nanoparticles During the Corrosion by Atomic Force Microscopy (AFM) and Kelvin Probe Force Microscopy (KFM)
    Raj, X. Joseph
    Nishimura, T.
    INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2014, 9 (04): : 2090 - 2100
  • [46] Quantitative characterization of built-in potential profile across GaAs p-n junctions using Kelvin probe force microscopy with qPlus sensor AFM
    Ishida, Nobuyuki
    Mano, Takaaki
    NANOTECHNOLOGY, 2024, 35 (06)
  • [47] The Kelvin Probe Force Microscopy Measurement of Degraded Multilayer Ceramic Capacitors with Ni Inner Electrode
    Okamoto, Takafumi
    Inoue, Noriyuki
    Kitagawa, Shuji
    Niimi, Hideaki
    Ando, Akira
    Takagi, Hiroshi
    ELECTROCERAMICS IN JAPAN XIV, 2011, 485 : 47 - 50
  • [48] Potential Dip in Organic Photovoltaics Probed by Cross-sectional Kelvin Probe Force Microscopy
    Lee, Jongjin
    Kong, Jaemin
    NANOSCALE RESEARCH LETTERS, 2018, 13
  • [49] Potential Dip in Organic Photovoltaics Probed by Cross-sectional Kelvin Probe Force Microscopy
    Jongjin Lee
    Jaemin Kong
    Nanoscale Research Letters, 2018, 13
  • [50] Surface potential measurements of 2 x 1 reconstructed Si(001) using UHV Kelvin probe force microscopy
    Lee, Sangyeob
    SURFACE SCIENCE, 2015, 641 : 16 - 22
12345