Measurement of contact potential of GaAs/AlGaAs heterostructure using Kelvin probe force microscopy

被引：11
|
作者：
Mizutani, T [1 ]
Usunami, T [1 ]
Kishimoto, S [1 ]
Maezawa, K [1 ]
机构：
[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 7A期
关键词：
Kelvin probe force microscopy; KFM; GaAs/AlGaAs heterostructure; contact potential; charge neutrality level;
D O I：
10.1143/JJAP.38.L767
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have shown that the contact potential of i-GaAs/i-AlGaAs heterostructures can be measured using Kelvin probe force microscopy (KFM). The measured contact potential difference between GaAs and AlGaAs increases monotonically with increasing AlAs mole fraction. This dependence does not agree with the model for the ideal interface where the measured contact potential is dominated by the Fermi level which lies in the midgap of bulk materials. The results are explained based on the model of the alignment of charge neutrality level during heterostructure formation.
引用
收藏
页码：L767 / L769
页数：3
相关论文
共 50 条
  • [1] Measurement of contact potential of GaAs pn junctions by Kelvin probe force microscopy
    Mizutani, T
    Usunami, T
    Kishimoto, S
    Maezawa, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (08): : 4893 - 4894
  • [2] Contact potential measurement of carbon nanotube by Kelvin probe force microscopy
    Maeda, C
    Kishimoto, S
    Mizutani, T
    Sugai, T
    Shinohara, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4B): : 2449 - 2452
  • [3] Kelvin probe force microscopy for potential distribution measurement of cleaved surface of GaAs devices
    Arakawa, M
    Kishimoto, S
    Mizutani, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1826 - 1829
  • [4] Surface Potential Measurement of Bacteria Using Kelvin Probe Force Microscopy
    Birkenhauer, Eric
    Neethirajan, Suresh
    JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, 2014, (93): : e52327
  • [5] Measurement of Surface Potential and Adhesion with Kelvin Probe Force Microscopy
    Zhang, Hao
    Hussain, Danish
    Meng, Xianghe
    Song, Jianmin
    Xie, Hui
    2016 INTERNATIONAL CONFERENCE ON MANIPULATION, AUTOMATION AND ROBOTICS AT SMALL SCALES (MARSS), 2016,
  • [6] Effect of dopant density on contact potential difference across n-type GaAs homojunctions using Kelvin Probe Force Microscopy
    Boumenou, C. Kameni
    Urgessa, Z. N.
    Djiokap, S. R. Tankio
    Botha, J. R.
    Nel, J.
    PHYSICA B-CONDENSED MATTER, 2018, 535 : 84 - 88
  • [7] Nonuniform contact potential profile of AlGaN/GaN on SiC measured by Kelvin probe force microscopy
    Eguchi, Y
    Kishimoto, S
    Mizutani, T
    Masato, H
    Nishii, K
    Inoue, K
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 697 - 700
  • [8] Surface potential measurement of oligothiophene ultrathin films by Kelvin probe force microscopy
    Umeda, K
    Kobayashi, K
    Ishida, K
    Hotta, S
    Yamada, H
    Matsushige, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (6B): : 4381 - 4383
  • [9] Cross-sectional potential imaging of compound semiconductor heterostructure by Kelvin probe force microscopy
    Usunami, T
    Arakawa, M
    Kishimoto, S
    Mizutani, T
    Kagawa, T
    Iwamura, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B): : 1522 - 1526
  • [10] Pulsed Force Kelvin Probe Force Microscopy
    Jakob, Devon S.
    Wang, Haomin
    Xu, Xiaoji G.
    ACS NANO, 2020, 14 (04) : 4839 - 4848
12345