Effect of post-annealing in oxygen atmosphere on the photoluminescence properties of nc-Si rich SiO2 films

被引：11

作者：

Bi, L ^{[1
]}

He, Y ^{[1
]}

Feng, JY ^{[1
]}

机构：

[1] Tsing Hua Univ, Key Lab Adv Mat, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 289卷 / 02期

基金：

中国国家自然科学基金;

关键词：

interfaces; low-dimensional structures; physical vapor deposition process; nanomaterials; semiconducting materials;

D O I：

10.1016/j.jcrysgro.2005.12.014

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this study, Si-rich silicon oxide (SiO1.56) films are fabricated by reactive sputtering and subsequently annealed at high temperature in N-2 or Ar atmosphere. High-resolution transmission electron microscopy (HRTEM) and Raman spectrum confirms the formation of silicon nanocrystals (nc-Si). After the first step annealing process, oxygen is introduced as a post-annealing atmosphere. It has been observed that the photoluminescence properties of the films change dramatically due to the post-annealing, and the variation differs depending on the first-step annealing atmosphere. The mechanism of this phenomenon has been discussed and it has been concluded that the post-annealing mainly serves as both a passivation and an oxidation process at the nanocrystal interface. Oxygen is considered to be a more stable passivating atmosphere for SiOx films annealed in N-2 at high temperatures instead of H-2. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：564 / 567

页数：4

共 18 条

[1] Confinement in silicon nanowires: Optical properties [J].

Bhattacharya, S ;

Banerjee, D ;

Adu, KW ;

Samui, S ;

Bhattacharyya, S .

APPLIED PHYSICS LETTERS, 2004, 85 (11) :2008-2010

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[3] Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition [J].

Chen, XY ;

Lu, YF ;

Tang, LJ ;

Wu, YH ;

Cho, BJ ;

Xu, XJ ;

Dong, JR ;

Song, WD .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)

[4] Electroluminescence of silicon nanocrystals in MOS structures [J].

Franzò, G ;

Irrera, A ;

Moreira, EC ;

Miritello, M ;

Iacona, F ;

Sanfilippo, D ;

Di Stefano, G ;

Fallica, PG ;

Priolo, F .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 74 (01) :1-5

[5] Structure and energetics of Si nanocrystals embedded in a-SiO2 -: art. no. 226104 [J].

Hadjisavvas, G ;

Kelires, PC .

PHYSICAL REVIEW LETTERS, 2004, 93 (22)

[6]

Iyer S.S., 1993, SCIENCE, V40, P260

[7] VISIBLE PHOTOLUMINESCENCE FROM OXIDIZED SI NANOMETER-SIZED SPHERES - EXCITON CONFINEMENT ON A SPHERICAL-SHELL [J].

KANEMITSU, Y ;

OGAWA, T ;

SHIRAISHI, K ;

TAKEDA, K .

PHYSICAL REVIEW B, 1993, 48 (07) :4883-4886

[8] Systematic correlation between Raman spectra, photoluminescence intensity, and absorption coefficient of silica layers containing Si nanocrystals [J].

Khriachtchev, L ;

Räsänen, M ;

Novikov, S ;

Pavesi, L .

APPLIED PHYSICS LETTERS, 2004, 85 (09) :1511-1513

[9] Substrate-dependent crystallization and enhancement of visible photoluminescence in thermal annealing of Si/SiO2 superlattices [J].

Khriachtchev, L ;

Kilpelä, O ;

Karirinne, S ;

Keränen, J ;

Lepistö, T .

APPLIED PHYSICS LETTERS, 2001, 78 (03) :323-325

[10] Photoluminescence properties of silicon nanocrystals as a function of their size [J].

Ledoux, G ;

Guillois, O ;

Porterat, D ;

Reynaud, C ;

Huisken, F ;

Kohn, B ;

Paillard, V .

PHYSICAL REVIEW B, 2000, 62 (23) :15942-15951

← 1 2 →