Effect of electrical and mechanical stresses of low temperature a-Si: H thin film transistors fabricated on polyimide and glass substrates

被引：5
作者：
Huang, Jung-Jie [1 ]
Chen, Chao-Nan [2 ]
机构：
[1] MingDao Univ, Dept Mat Sci & Engn, Chunghua 52354, Taiwan
[2] Asia Univ, Dept Comp Sci & Informat Engn, Taichung 413, Taiwan
来源：
THIN SOLID FILMS | 2013年 / 529卷
关键词：
Thin film transistor; Polyimide substrate; Electrical stress; AMORPHOUS-SILICON; PERFORMANCE; STABILITY; MOBILITY; TFT;
D O I：
10.1016/j.tsf.2012.09.038
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogenated amorphous silicon thin film transistors (TFTs) were fabricated by plasma enhanced chemical vapor deposition on both transparent polyimide and glass substrate. The electrical characteristics and surface morphology of a-Si:H/SiNx:H films on polyimide and glass substrate were compared. TFTs fabricated on polyimide substrate show better electrical performance than on glass substrate. Moreover, the threshold voltage shift of TFTs on polyimide substrate is smaller than those TFTs on glass. The similar trend is also found either under electrical stress or 0.2% mechanical strain. The superior electrical characteristics of TFTs on polyimide substrate than that on glass substrate were attributed to the better surface morphology of a-Si:H/SiNx:H film on polyimide. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：454 / 458
页数：5
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