High nitrogen pressure solution growth of GaN in multi feed-seed configuration

被引：6

作者：

Bockowski, M. ^{[1
]}

Lucznik, B. ^{[1
]}

Sochacki, T. ^{[1
]}

Sadovyi, B. ^{[1
]}

Nowak, G. ^{[1
]}

Litwin-Staszewska, E. ^{[1
]}

Grzegory, I. ^{[1
]}

机构：

[1] PAS, Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期

关键词：

high nitrogen pressure solution growth; seeded growth; HVPE growth; lattice bowing radius;

D O I：

10.1002/pssc.201100366

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The results of High Nitrogen Pressure Solution (HNPS) growth of GaN in multi feed-seed (MFS) configuration are presented. The idea of this configuration is based on the conversion of the free standing HVPE-GaN crystals (seeds) to the free standing HNPS-GaN of much higher quality than the seeds. A new arrangement of the seeds in the MFS configuration is shown. The influence of the experimental conditions (i.e. growth temperature, temperature gradient) on the growth rate, growth mode and electrical properties of HNPS-GaN is presented. The regrowth procedure is introduced in order to increase the lattice bowing radii of the HNPS-GaN crystals and finally obtain crystalographically flat (bowing radius of 30 meters) pressure grown GaN substrates. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：453 / 456

页数：4

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Firek, Piotr ;

Szmidt, Jan ;

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Suski, Tadek .

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